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74VHCT14A - HEX SCHMITT INVERTER

Datasheet Summary

Description

The 74VHCT14A is an advanced high-speed CMOS HEX SCHMITT inverter fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.

Features

  • High speed: tPD = 5.5ns (typ. ) at VCC = 5V.
  • Low power dissipation: ICC = 2 µA (Max. ) at TA = 25°C.
  • Typical hysteresis: Vh = 0.7V at VCC = 4.5V.
  • Power down protection on inputs & outputs.
  • Symmetrical output impedance: |IOH| = IOL = 8 mA (Min).
  • Balanced propagation delays: tPLH ≅ tPHL.
  • Operating voltage range: VCC(Opr) = 4.5V to 5.5V.
  • Pin and function compatible with 74 series 14.
  • Improved latch-up immunity.
  • Low noise: VOLP = 0.8V (Max. ) Descripti.

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Datasheet Details

Part number 74VHCT14A
Manufacturer STMicroelectronics
File Size 218.56 KB
Description HEX SCHMITT INVERTER
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74VHCT14A HEX SCHMITT inverter Features ■ High speed: tPD = 5.5ns (typ.) at VCC = 5V ■ Low power dissipation: ICC = 2 µA (Max.) at TA = 25°C ■ Typical hysteresis: Vh = 0.7V at VCC = 4.5V ■ Power down protection on inputs & outputs ■ Symmetrical output impedance: |IOH| = IOL = 8 mA (Min) ■ Balanced propagation delays: tPLH ≅ tPHL ■ Operating voltage range: VCC(Opr) = 4.5V to 5.5V ■ Pin and function compatible with 74 series 14 ■ Improved latch-up immunity ■ Low noise: VOLP = 0.8V (Max.) Description The 74VHCT14A is an advanced high-speed CMOS HEX SCHMITT inverter fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.
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