Datasheet Summary
STB7ANM60N, STD7ANM60N
Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages
3 1 D2PAK
23 1
DPAK
D(2, TAB)
Features
Order code STB7ANM60N STD7ANM60N
RDS(on) max.
600 V
0.9 Ω
5A
- AEC-Q101 qualified
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Package D²PAK DPAK
G(1) S(3)
Applications
- Switching applications
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the pany’s strip layout to yield one of the...