7NC80ZFP - STP7NC80ZFP

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP7NC80Z.

STMicroelectronics

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Datasheet Details

Part number	7NC80ZFP
Manufacturer	STMicroelectronics
File Size	455.89 KB
Description	STP7NC80ZFP
Datasheet	7NC80ZFP Datasheet
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STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC80Z STP7NC80ZFP www.DataSheet4U.com STB7NC80Z STB7NC80Z-1 s s VDSS 800 800 800 800 V V V V RDS(on) < < < < 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω ID 6.5 A 6.5 A 6.5 A 6.5 A TO-220 3 1 s s s TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D2PAK 3 1 2 TO-220FP 12 3 I2PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Published: May 16, 2008 |