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80N70F4 - STP80N70F4

General Description

This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology.

The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance.

Figure 1.

Key Features

  • Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A.
  • N-channel enhancement mode.
  • 100% avalanched rated.
  • Low gate charge.
  • Very low on-resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP80N70F4 N-channel 68 V, 8.2 mΩ typ., 85 A STripFET™ DeepGATE™ Power MOSFET in TO-220 package Datasheet — production data Features Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance Application Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. 3 2 1 TO-220 Figure 1. Internal schematic diagram $ ' 3 !-V Table 1.