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85N3LH5 - STD85N3LH5

Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Features

  • www. DataSheet4U. com Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS 30 V 30 V 30 V RDS(on) max < 0.005 Ω < 0.0054 Ω < 0.0054 Ω ID 80 A 80 A 80 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Datasheet preview – 85N3LH5

Datasheet Details

Part number 85N3LH5
Manufacturer STMicroelectronics
File Size 384.14 KB
Description STD85N3LH5
Datasheet download datasheet 85N3LH5 Datasheet
Additional preview pages of the 85N3LH5 datasheet.

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    Full PDF Text Transcription

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    STD85N3LH5 STP85N3LH5 - STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features www.DataSheet4U.com Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS 30 V 30 V 30 V RDS(on) max < 0.005 Ω < 0.0054 Ω < 0.0054 Ω ID 80 A 80 A 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1.
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