Datasheet4U Logo Datasheet4U.com

93CS46 - 1K 64 x 16 SERIAL MICROWIRE EEPROM

General Description

The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.

The memory is accessed through a serial input D and output Q.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ST93CS46 ST93CS47 1K (64 x 16) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE SUPPLY VOLTAGE www.DataSheet4U.com – 3V to 5.5V for the ST93CS46 – 2.5V to 5.5V for the ST93CS47 USER DEFINED WRITE PROTECTED AREA PAGE WRITE MODE (4 WORDS) SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ST93CS46 and ST93CS47 are replaced by the M93S46 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram DESCRIPTION The ST93CS46 and ST93CS47 are 1K bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology.