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96N3LLH6 - N-channel MOSFET

Datasheet Summary

Description

This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Features

  • Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Datasheet Details

Part number 96N3LLH6
Manufacturer STMicroelectronics
File Size 920.17 KB
Description N-channel MOSFET
Datasheet download datasheet 96N3LLH6 Datasheet
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    STD96N3LLH6 N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Description This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1.
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