96N3LLH6 Datasheet | STMicroelectronics

Features Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness - Low gate drive power losses Application - Switching applications - Automotive Description This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STrip FET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STD96N3LLH6 Marking 96N3LLH6 S(3) AM01474v1 Package DPAK Packaging Tape and reel January 2011 Doc ID 18432 Rev 1 1/15 .st. Contents Contents STD96N3LLH6 1 Electrical ratings - - - - - - - - . . . . 3 2...