STMicroelectronics A1F25M12W2-F1
This power module features a fourpack topology in an ACEPACK 1 module with NTC and integrates the most advanced silicon carbide MOSFETs of STMicroelectronics which are represented by the gen.2 technology. This modular solution can be used to realize complex topologies characterized by very high power density in order to meet the higest efficiency requirements.| Part No. | A1F25M12W2-F1 |
|---|---|
| Datasheet | A1F25M12W2-F1 Download |
| Manufacturer |  STMicroelectronics |
| Description | ACEPACK 1 power module |
| Buy | Stock & Price |
FEATURES
● ACEPACK 1 power module: – DBC Cu-Al2O3-Cu based – Insulation voltage UL certified of 2.5 kVrms – Press-fit contact pins● Fourpack topology: – 1200 V SiC MOSFET – RDS(on) typical 25 mΩ – Very high-power density – Very low switching energies – Switching characteristic almost independent from temperature
● Integrated NTC temperature sensor
APPLICATIONS
● DC/DC converter● High frequency switching application
● Welding
DESCRIPTION
Product summary Order code A1F25M12W2-F1 Marking A1F25M12W2-F1 Package ACEPACK 1 Packing Tray Leads type Press-fit DS13470 - Rev 4 - April 2023 For further information contact your local STMicroelectronics sales office. A1F25M12W2-F1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage, recommended operating values ID Drain current (continuous) at TH = 25 °C IDP(1) TJ Pulsed drain current Maximum junction temperature Operating junction temperature range under switching conditions 1.
