STMicroelectronics A1P50S65M2
This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.| Part No. | A1P50S65M2 |
|---|---|
| Datasheet | A1P50S65M2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 50A IGBT |
| Buy | Stock & Price |
FEATURES
● ACEPACK™ 1 power module – DBC Cu Al2O3 Cu● Sixpack topology – 650 V, 50 A IGBTs and diodes – Soft and fast recovery diode
● Integrated NTC
APPLICATIONS
● Inverters● Industrial
● Motor drives
DESCRIPTION
Product status A1P50S65M2 Product summary Order code A1P50S65M2 Marking A1P50S65M2 Package ACEPACK™ 1 Leads type Solder contact pins DS12332 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings A1P50S65M2 Electrical ratings 1.1 IGBT Limiting values at TJ = 25 °C, unless otherwise specified. Table 1. Absolute maximum ratings of the IGBT Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) IC Continuous collector current (TC = 100 °C) ICP(1) Pulsed collector current (tp = 1 ms) VGE Gate-emitter voltage PTOT Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C) TJMAX Maximum junction temperature TJop Operating junction temperature range under switching conditions 1. Pulse width limited by maximum junction temperature.
