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A2C35S12M3

A2C35S12M3 is IGBT manufactured by STMicroelectronics.
A2C35S12M3 datasheet preview

A2C35S12M3 Datasheet

Part number A2C35S12M3
Download A2C35S12M3 Datasheet PDF
File Size 937.69 KB
Manufacturer STMicroelectronics
Description IGBT
A2C35S12M3 page 2 A2C35S12M3 page 3

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A2C35S12M3 Description

This power module is a converter-inverter brake (CIB) topology in an ACEPACK 2 package with NTC, integrating the advanced trench gate field-stop technology from STMicroelectronics. This new IGBT technology represents the best promise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.

A2C35S12M3 Key Features

  • ACEPACK 2 power module
  • DBC Cu Al2O3 Cu
  • Converter inverter brake topology
  • 1600 V, very low drop rectifiers for converter
  • 1200 V, 35 A IGBTs and diodes
  • Soft and fast recovery diode
  • Integrated NTC
  • UL recognition: UL 1557, file E81734
  • Isolation rating of 2500 Vrms/min
  • RoHS pliant
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