ADP61075W3 Description
carbide Power MOSFET 2nd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification rweocrhkainrTvggehinmhegoiccdAyleeCc.lseTEshtP.risaAcwCtililKoennDsinuRrveIVesrEutepiers.rbTaehcffiioscimepnopcway cientrfsimniaxolpadapucplkleicmafetiooandt,uusrlaeevsiongspwtbimaittctiezhreyeds for hybrid based on and electric silicon...
ADP61075W3 Key Features
- AQG 324 qualified
- 3.-5 mΩ1o.f2tympicΩaloRfDtSy(opni)cal RDS(on)
- M-aximuMmaoxpiemrautimve ojupnectrioantitnegmpjuenractutiroenTJtoepm=p1e75ra°tCure TJ = 175 °C
- Ve-ry lowVeswryitclhoiwngsewneitrcgyhing energy
- Low inductive pact design for an higher power density
- S-i3N4 ALMoBwsuinbdsturactetivtoeimcoprmovpeathcet rdmeasl pigenrfofromraanncehigher power density
- S-iC PowSei3rNM4OSAFMEBT cshuipbssintrtaerteedttoo simubpsrtroavteefotrhiemrpmroavledpelifreftoimrme ance
- 4.-2 kV DSCiC1 Ps oinwsuelartiMonOSFET chip sintered to substrate for improved lifetime
- D-irect c4o.o2lekdVCuDbCas1e pslaitneswuitlhatpioinnfins
- Three integrated NTC temperature sensors