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ADP61075W3 - SiC MOSFET

General Description

carbide Power MOSFET 2nd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification rweocrhkainrTvggehinmhegoiccdAyleeCc.lseTEshtP.risaAcwCtililKoennDsinuRrveIVesrEutepiers.rbTaehcffiioscimepnopcway cientrfsimniaxolpada

Key Features

  • Features.

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ADP61075W3 ADP86012W2 Datasheet Automotive-grade ACEPACK DRIVE power moduDlaeta,ssheixept ack topology 750 V, 1.2 mΩ typ. SiC MOSFET gen.3 based Automotive-grade ACEPACK DRIVE power module, six pack topology 1200 V, 3.5 mΩ typ. SiC MOSFET gen.2 based Features Features AACCEEPPAACCKKDDRRIVIEVE ACEPACK DRIVE • AQG 324 qualified • • D12•e0s0igVne7bd5lof0ockrVianugbtovlomocltoaktgiivneegapvpolilctaatgioens • 3.•5 mΩ1o.