AM1011-300 Description
AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTING LOW RF INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. Minimal amplitude droop over the heavy Mode-S pulse burst is guarante ed by a thermal design incorporating an overlay site-ballasted die geometry.
AM1011-300 Key Features
- PD IS S IC VCC TJ TSTG Parameter Power Dissipation Device Current* (TC ≤100°C)* Collector-Supply Voltage*
- u e T yp. — — — — — Max. — — — 30 — Unit V V V mA — DYNAMIC S ymb ol T est Co nditi ons POUT f = 1090 MH