Datasheet Summary
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed
ORDER CODE AM1214-175
B RA ND IN G 1214-175
DESCRIPTION
The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF...