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AM1214-175 Datasheet Rf & Microwave Transistors

Manufacturer: STMicroelectronics

Overview: AM1214-175 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 160 W MIN. WITH 7.3 dB GAIN .400 x .

General Description

The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 3:1 output VSWR at rated RF conditions.

Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.

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