STMicroelectronics AM1214-200
The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions. AM1214-200 is supplied in the BIGPAC™ hermetic metal/ceramic package with internal input/output matching structures.| Part No. | AM1214-200 |
|---|---|
| Datasheet | AM1214-200 Download |
| Manufacturer |  STMicroelectronics |
| Description | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .500 2LFL (M205) hermetically sealed ORDER CODE BRANDING 1214-200 AM1214-200 PIN CONNECTIONDESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 575 16 40 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.26 °C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-200ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ.
