Datasheet Details
| Part number | AM1214-200 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 57.53 KB |
| Description | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1214-200_STMicroelectronics.pdf |
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Overview: AM1214-200 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 200 W MIN. WITH 7.0 dB GAIN .400 x .
| Part number | AM1214-200 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 57.53 KB |
| Description | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1214-200_STMicroelectronics.pdf |
|
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The AM1214-200 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures, and wiil tolerate severe mismatch and overdrive conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
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