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AM1214-300 - RF & MICROWAVE TRANSISTORS

General Description

The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.