Datasheet Details
| Part number | AM1214-300 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 90.35 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1214-300_STMicroelectronics.pdf |
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Overview: AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .
| Part number | AM1214-300 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 90.35 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM1214-300_STMicroelectronics.pdf |
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The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AM1214-300 | NPN SILICON RF POWER TRANSISTOR | ASI |
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|---|---|
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