AM1214-300 Datasheet | STMicroelectronics

RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN. WITH 6.3 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low RF thermal resistance...