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AM1214-325 - L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

General Description

The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.

This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM1214-325 . . . . . . . . RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325 PIN CONNECTION DESCRIPTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions.