Datasheet Summary
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RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325
PIN CONNECTION DESCRIPTION The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal...