STMicroelectronics AM1214-325
The AM1214-325 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. The AM1214-325 is supplied in the BIGPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures.| Part No. | AM1214-325 |
|---|---|
| Datasheet | AM1214-325 Download |
| Manufacturer |  STMicroelectronics |
| Description | L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325 PIN CONNECTIONDESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case Symbol 1. Collector 2. Base 3. Emitter 4. Base = 25 ° C) Value Unit Parameter PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 1250 25 45 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.10 °C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM1214-325ELECTRICAL SPECIFICATIONS
(Tcase STATIC Symbol Test Conditions Valu e Min. Typ. Max. Unit = 25 °C...
