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AM1517-025 - RF & MICROWAVE TRANSISTORS

General Description

The AM1517-025 power transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 frequency range.

The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM1517-025 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS • REFRACTORY/GOLD METALLIZATION • EMITTER SITE BALLASTED • ∞:1 VSWR CAPABILITY • LOW THERMAL RESISTANCE • INPUT/OUTPUT MATCHING • OVERLAY GEOMETRY • METALLIC/CERAMIC HERMETIC PACKAGE • POUT = 25 W MIN. WITH 8.5 dB GAIN SO42 hermetically sealed ORDER CODE AM1517-025 BRANDING 1517-25 DESCRIPTION The AM1517-025 power transistor is designed specifically for Satellite communications applications in the 1.5 - 1.7 frequency range. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/Gold metallization system.