AM1517-025
AM1517-025 is RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The AM1517-025 power transistor is designed specifically for Satellite munications applications in the 1.5
- 1.7 frequency range.
The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/Gold metallization system. The AM1517-025 is supplied in the AMPACTM Hermetic/Ceramic package with internal Input/ Output matching structures.
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C)
Symbol
Parameter
PDISS IC
Power Dissipation- ( Tc≤ 50 0C) Device Current-
Collector-Supply Voltage-
Tj
Junction Temperature
TSTG Storage Temperature
THERMAL DATA
Rth(j-c) Junction-Case Thermal Resistance-
- Applies only to rated RF amplifier operation
May 2000
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value 45 2.5 30 200
-65 to +200
Unit W A V 0C 0C
0C/W 1/8
ELECTRICAL SPECIFICATION(TCASE = 25 0C)
STATIC
Symbol BVCBO BVEBO
ICBO h FE
IC = 8 m A IE = 8 m A VCB = 28 V VCE = 5 V
Parameter IE = 0 m A IC = 0 m A
IC = 1.6 A
Min . 45 3.0 --15
Typ. ---------
Max....
