Datasheet Details
| Part number | AM2729-110 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 61.89 KB |
| Description | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM2729-110_STMicroelectronics.pdf |
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Overview: AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB GAIN .400 x .
| Part number | AM2729-110 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 61.89 KB |
| Description | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM2729-110_STMicroelectronics.pdf |
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PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.
Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
| Part Number | Description |
|---|---|
| AM2729-125 | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| AM2931-110 | S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS |