AM2931-110 Datasheet PDF | STMicroelectronics

STMicroelectronics AM2931-110

The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. The AM2931-110 is supplied in the BIGPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching circuitry, and is intended for military and other high reliability applications.

Part No.	AM2931-110
Datasheet	AM2931-110 Download
Manufacturer	STMicroelectronics
Description	S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
Buy	Stock & Price

APPLICATIONS

. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110

DESCRIPTION

Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).

ABSOLUTE MAXIMUM RATINGS

(T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 375 12 48 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.40 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM2931-110

ELECTRICAL SPECIFICATIONS

(Tcase = 25 ° C) STATIC Valu e Symbol Test Conditions Min.