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AM2931-110 - S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

General Description

The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.

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Other Datasheets by STMicroelectronics

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AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM2729-125 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

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AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931-110 DESCRIPTION The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.