Datasheet Details
| Part number | AM80610-030 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 44.58 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80610-030_STMicroelectronics.pdf |
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Overview: AM80610-030 RF & MICROWAVE TRANSISTORS UHF MUNICATIONS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .
| Part number | AM80610-030 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 44.58 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80610-030_STMicroelectronics.pdf |
|
|
|
The AM80610-030 is a high power, mon base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.
AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers.
Typical applications include military munications, ECM, and test equipment.
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