AM80610-030 - RF & MICROWAVE TRANSISTORS

STMicroelectronics

General Description

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range.

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AM80610-030 rf & microwave transistors by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	AM80610-030
Manufacturer	STMicroelectronics
File Size	44.58 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	AM80610-030 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM80610-030 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed ORDER CODE AM80610-030 BRANDING 80610-30 DESCRIPTION The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment.