AM80610-030 Datasheet PDF | STMicroelectronics

STMicroelectronics AM80610-030

The AM80610-030 is a high power, common base NPN silicon bipolar device optimized for CW operation in the 620 - 960 MHz frequency range. The AM80610-030 is provided in the industrystandard, metal/ceramic AMPAC™ hermetic package.

Part No.	AM80610-030
Datasheet	AM80610-030 Download
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Buy	Stock & Price

APPLICATIONS

. . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 8.5 dB GAIN .400 x .400 2NLF L (S042) hermetically sealed ORDER CODE AM80610-030 BRANDING 80610-30

DESCRIPTION

AM80610-030 utilizes a rugged, overlay, emitterballasted L-Band die geometry to achieve high gain and collector efficiency and is suitable for driver or output stage use in Class C power amplifiers. Typical applications include military communications, ECM, and test equipment. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base

ABSOLUTE MAXIMUM RATINGS

(T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 57 3.0 32 200 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation AM80610-030

ELECTRICAL SPECIFICATIONS

(T case = 25°C) STATIC Symbo l T est Con ditio ns Value Min.