AM80814-005
AM80814-005 is RF & MICROWAVE TRANSISTORS manufactured by STMicroelectronics.
DESCRIPTION
The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. Low thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency. The AM80814-005 is supplied in the IMPAC™ Hermeti c M etal/ Ceramic package with internal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
Value
Unit
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤ 100°C)
23 1.0 28 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance-
- Applies only to rated RF amplifier operation
°C/W
August 1992
1/5
ELECTRICAL SPECIFICATIONS (T case = 25° C) STATIC
Value Symbol Test Conditions Min. Typ. Max. Unit
BVCBO BVEBO BVCER ICES h FE DYNAMIC
Symbol
IC = 1m A IE = 1m A IC = 5m A VBE = 0V VCE = 5V
IE = 0m A IC = 0m A RBE = 10Ω VCE = 28V IC = 250m A
48 3.5 48
- 30
- -
- -
- -
- - 500 300
V V V m A
- Test Conditions
Min.
Value Typ.
Max.
Unit
POUT ηc...
