Datasheet Details
| Part number | AM80814-005 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 72.53 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80814-005_STMicroelectronics.pdf |
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Overview: AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 5.0 W MIN. WITH 8.5 dB GAIN .310 x .
| Part number | AM80814-005 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 72.53 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80814-005_STMicroelectronics.pdf |
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The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.
Low thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency.
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