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AM80814-005 - RF & MICROWAVE TRANSISTORS

General Description

The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM80814-005 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 5.0 W MIN. WITH 8.5 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80814-005 BRANDING 80814-5 DESCRIPTION The AM80814-005 device is a high power Class C transistor specifically designed for L-Band radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.