AM80814-025 Datasheet | STMicroelectronics

DESCRIPTION AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. Low RF thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency. AM80814-025 is supplied in the industry-standard AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation- (TC ≤ 75˚C) Device Current- Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage Temperature 75 3.5 38 250 - 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance- 2.3 °C/W - Applies only to rated RF amplifier operation August 1992 1/3 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES h FE IC = 10m A IE = 1m A IC = 20m A VBE = 0V VCE = 5V IE = 0m A IC = 0m A RBE = 10Ω VCE = 28V IC = 1A 55 3.5 55 - 15 - - - - - - - - 5 150 V V V m A - DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT ηc GP Note: f = 850 - 1400MHz f = 850 - 1400MHz f = 850 - 1400MHz = = 120 µ S 4% PIN = 5.0W PIN = 5.0W PIN = 5.0W VCC = 35V VCC = 35V VCC = 35V 25 38 7.0 - - - - - - W % d B Pulse Width Duty...