STMicroelectronics AM80814-025
AM80814-025 is a high power silicon Class C transistor designed for ultra-broadband L-Band radar applications. This device is capable of operation over a broad range of pulse widths and duty cycles. AM80814-025 is supplied in the industry-standard AMPAC™ hermetic Metal/Ceramic package incorporating Input/Output impedance matching.| Part No. | AM80814-025 |
|---|---|
| Datasheet | AM80814-025 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 7.0 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80814-025 BRANDING 80814-25 PIN CONNECTIONDESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation*(TC ≤ 75˚C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature 75 3.5 38 250 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.3 °C/W *Applies only to rated RF amplifier operation August 1992 1/3 AM80814-025ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Value Symbol Test Conditions Min. Typ. Max.
