STMicroelectronics AM80912-005
The AM80912-005 is designed for specialized avionics applications, including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-005 i s housed in the unique IMPAC™ Hermetic Metal/Ceramic package with ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.| Part No. | AM80912-005 |
|---|---|
| Datasheet | AM80912-005 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM80912-005 BRANDING 80912-5 PIN CONNECTIONDESCRIPTION
Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 75°C) 25 0.9 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 7.0 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM80912-005ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 1mA IE = 1mA IC = 5mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 28V IC = 250mA 48 3.5 48 — 30 — — — — — — — — 0.5 300 V V V mA — DYNAMIC Value Symbol Test Conditions Min.
