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AM80912-030 - AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

General Description

The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80912-030 BRANDING 80912-30 DESCRIPTION The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.