STMicroelectronics AM80912-030
The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. The AM80912-030 is supplied in the hermetic metal/ceramic package with internal input matching structures.| Part No. | AM80912-030 |
|---|---|
| Datasheet | AM80912-030 Download |
| Manufacturer |  STMicroelectronics |
| Description | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM80912-030 BRANDING 80912-30DESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. BaseABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Collector Current* (TC ≤ 85° C) 75 3.5 40 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 2.2 °C/W *Applies only to rated RF amplifier operation. August 1992 1/6 AM80912-030ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Value Symbol Test Conditions Min .
