Datasheet Details
| Part number | AM80912-030 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 94.00 KB |
| Description | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80912-030_STMicroelectronics.pdf |
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Overview: AM80912-030 RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 7.8 dB GAIN .400 x .
| Part number | AM80912-030 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 94.00 KB |
| Description | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Datasheet | AM80912-030_STMicroelectronics.pdf |
|
|
|
The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions.
Low RF thermal resistance and puterized automatic wire bonding techniques ensure high reliability and product consistency.
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