STMicroelectronics AM80912-085
The AM80912-085 is designed for specialized avionics applications including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM80912-085 is housed in a unique BIGPAC™ Hermetic Metal/Ceramic package with inABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1.| Part No. | AM80912-085 |
|---|---|
| Datasheet | AM80912-085 Download |
| Manufacturer |  STMicroelectronics |
| Description | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 85 W MIN. WITH 7.5 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM80912-085 BRANDING 80912-85 PIN CONNECTIONDESCRIPTION
Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 300 8.0 40 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.75 °C/W *Applies only to rated RF amplifier operation August 1992 1/5 AM80912-085ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Unit BVCBO BVEBO BVCER ICES hFE IC = 25mA IE = 10mA IC = 25mA VBE = 0V VCE = 5V IE = 0mA IC = 0mA RBE = 10Ω VCE = 35V IC = 2A 55 3.5 55 — 20 — — — — — — — — 20 200 V V V mA — DYNAMIC Value Symbol Test Conditions Min.
