STMicroelectronics AM81214-006
The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. AM81214-006 is supplied in the grounded IMPAC™ Hermetic Metal/Ceramic package with internal input/output matching structures.| Part No. | AM81214-006 |
|---|---|
| Datasheet | AM81214-006 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W MIN. WITH 10 dB GAIN .310 x .310 2LF L (S064) hermetically sealed ORDER CODE AM81214-6 BRANDING 81214-6DESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. BaseABSOLUTE MAXIMUM RATINGS
(T case = 25 °C) Symbol Parameter Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100 °C) 16.7 0.82 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 9.0 °C/W *Applies only to rated RF amplifier operation AM81214-006ELECTRICAL SPECIFICATIONS
(T case = 25°C) STATIC Symbo l Test Con dition s Valu e Min. T yp. Max. Un...
