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AM81214-006 - RF & MICROWAVE TRANSISTORS

Description

The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications.

This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.

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Datasheet Details

Part number AM81214-006
Manufacturer STMicroelectronics
File Size 61.43 KB
Description RF & MICROWAVE TRANSISTORS
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AM81214-006 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 5.5 W MIN. WITH 10 dB GAIN .310 x .310 2LF L (S064) hermetically sealed ORDER CODE AM81214-6 BRANDING 81214-6 DESCRIPTION The AM81214-006 device is a high power Class C transistor specifically designed for L-Band Radar pulsed driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.
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