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AM81214-015
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 14.5 W MIN. WITH 8.6 dB GAIN
.310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM 81214-015 BRANDING 81214-15
PIN CONNECTION DESCRIPTION The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions.