STMicroelectronics AM81214-015
The AM81214-015 device is a high power Class C transistor specifically designed for L-Band Radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding 5:1 output VSWR at rated RF conditions. AM81214-015 is supplied in the grounded IMPAC™ Hermetic Metal/Ceramic package with internal input/output matching structures.| Part No. | AM81214-015 |
|---|---|
| Datasheet | AM81214-015 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 14.5 W MIN. WITH 8.6 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM 81214-015 BRANDING 81214-15 PIN CONNECTIONDESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 37.5 1.8 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 4.0 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM81214-015ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Value Symbol Test Conditions Min .
