STMicroelectronics AM81214-060
The AM81214-060 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications. The device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and is capable of withstanding ∞:1 output VSWR at rated RF conditions. The AM81214-060 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output matching structures.| Part No. | AM81214-060 |
|---|---|
| Datasheet | AM81214-060 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 55 W MIN. WITH 6.6 dB GAIN .400 x .400 2NLFL (S042) hermetically sealed ORDER CODE AM81214-060 BRANDING 81214-60DESCRIPTION
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base Value Unit PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 100°C) 107 5.0 32 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.4 °C/W *Applies only to rated RF amplifier operation August 1992 1/6 AM81214-060ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min. Typ. Max. Uni...
