AM81719-030 datasheet by STMicroelectronics.
| Part number | AM81719-030 |
|---|---|
| Datasheet | AM81719-030_STMicroelectronics.pdf |
| File Size | 64.39 KB |
| Manufacturer | STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
|
|
The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW munications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry puterized automatic wire bonding is employed to ensure long term reliability and product consistency. AM81719-030 is supplied in the industry-standard AMPAC™ hermetic metal/ceramic package.
View all STMicroelectronics datasheets
| Part Number | Description |
|---|---|
| AM81719-040 | RF & MICROWAVE TRANSISTORS |
| AM81720-012 | RF & MICROWAVE TRANSISTORS |
| AM81214-006 | RF & MICROWAVE TRANSISTORS |
| AM81214-015 | RF & MICROWAVE TRANSISTORS |
| AM81214-030 | RF & MICROWAVE TRANSISTORS |
| AM81214-060 | RF & MICROWAVE TRANSISTORS |
| AM80610-030 | RF & MICROWAVE TRANSISTORS |
| AM80814-005 | RF & MICROWAVE TRANSISTORS |
| AM80814-025 | RF & MICROWAVE TRANSISTORS |
| AM80912-005 | RF & MICROWAVE TRANSISTORS |
