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AM81719-030 - RF & MICROWAVE TRANSISTORS

General Description

The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.

An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency.

AM81719-030 is supplied in the industry-standard AMPACâ„¢ hermetic metal/ceramic package.

Overview

AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS .

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