STMicroelectronics AM81719-030
The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. AM81719-030 is supplied in the industry-standard AMPAC™ hermetic metal/ceramic package.| Part No. | AM81719-030 |
|---|---|
| Datasheet | AM81719-030 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147) hermetically sealed ORDER CODE AM81719-030 BRANDING 81719-030 PIN CONNECTIONDESCRIPTION
An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 67.3 2.67 28 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.6 °C/W *Applies only to rated RF amplifier operation September 1992 1/4 AM81719-030ELECTRICAL SPECIFICATIONS
(Tcase = 25 ° C) STATIC Symbol Test Conditions Value Min.
