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AM81719-030 - RF & MICROWAVE TRANSISTORS

Description

The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.

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Datasheet Details

Part number AM81719-030
Manufacturer STMicroelectronics
File Size 64.39 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet AM81719-030 Datasheet
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AM81719-030 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 28 W MIN. WITH 6.7 dB GAIN .400 SQ 2LFL (M147) hermetically sealed ORDER CODE AM81719-030 BRANDING 81719-030 PIN CONNECTION DESCRIPTION The AM81719-030 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range. An emitter site ballasted refractory/gold overlay die geometry computerized automatic wire bonding is employed to ensure long term reliability and product consistency.
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