STMicroelectronics AM81719-040
The AM81719-040 is a high power silicon NPN bipolar transistor designed for Class C, CW communications and telemetry applications in the 1.75 - 1.85 GHz frequency range.| Part No. | AM81719-040 |
|---|---|
| Datasheet | AM81719-040 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . PRELIMINARY DAT A REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LF L (M228) hermetically sealed ORDER CO DE AM81719-040 BRANDING 81719-40 PIN CONNECTIONDESCRIPTION
An emitter-ballasted refractory-gold overlay die geometry with computerized automatic wirebonding is employed to ensure long-term reliability and product consistency. 1. Collector 2. Base 3. Emitter 4. BaseABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol Parameter Valu e Un it PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 79.5 4.8 30 200 − 65 to +200 W A V °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 2.2 °C/W *Applies only to rated RF amplifier operation July 6, 1995 1/3 AM81719-040ELECTRICAL SPECIFICATIONS
(T case = 25 °C) STATIC Symbo l T est Co nditions Value Min . T yp. Max. Unit B...
