STMicroelectronics AM81720-012
The AM81720-012 is designed specifically for Telecommunications applications. The device is capable of withstanding any mismatch load condition at any phase angle (VSWR ∞:1) under full rated conditions. The unit is an overlay, emitter site ballasted, geometry utilizing a refractory/gold metallization system.| Part No. | AM81720-012 |
|---|---|
| Datasheet | AM81720-012 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF & MICROWAVE TRANSISTORS |
| Buy | Stock & Price |
APPLICATIONS
. . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGIZED VSWR ∞:1 LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 12 W MIN. WITH 7.4 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM81720-012 BRANDING 81720-12 PIN CONNECTIONDESCRIPTION
The unique AMPAC™ devices are housed in Hermetic Metal/Ceramic packages with internal Input/Output matching structures.ABSOLUTE MAXIMUM RATINGS
(T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 31.8 1.47 24 200 − 65 to +200 W A V °C °C °C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 5.5 *Applies only to rated RF amplifier operation NOTE: Thermal Resistance determined by Infra-Red Scanning of Hot-Spot Junction Temperature at rated RF operating conditions. September 1992 1/4 AM81720-012ELECTRICAL SPECIFICATIONS
(T case = 25 ° C) STATIC Symbol Test Conditions Value Min.
