AM82731-050 Datasheet PDF | STMicroelectronics

STMicroelectronics AM82731-050

The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive. The AM82731-050 is supplied in the AMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.

Part No.	AM82731-050
Datasheet	AM82731-050 Download
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Buy	Stock & Price

APPLICATIONS

REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50

DESCRIPTION

Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency.

ABSOLUTE MAXIMUM RATINGS

(T case = 25 ° C) Symbol Parameter Value Unit PIN CONNECTION 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC ≤ 50°C) 167 8 46 250 − 65 to +200 W A V °C °C Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 1.2 °C/W *Applies only to rated RF amplifier operation August 1992 1/4 AM82731-050

ELECTRICAL SPECIFICATIONS

(T case = 25 ° C) STATIC Valu e Symbol Test Conditions Min.