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AM82731-050 - RF & MICROWAVE TRANSISTORS

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The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

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Part number AM82731-050
Manufacturer STMicroelectronics
File Size 61.06 KB
Description RF & MICROWAVE TRANSISTORS
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AM82731-050 . . . . . . . . RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50 DESCRIPTION The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. The device is capable of operation over a wde range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive.
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