AM83135-030 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

STMicroelectronics

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Datasheet Details

Part number	AM83135-030
Manufacturer	STMicroelectronics
File Size	57.50 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	AM83135-030 Datasheet
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AM83135-030 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 30 W MIN. WITH 5.5 dB GAIN .310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM83135-030 BRANDING AM83135-30 DESCRIPTION The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive.

Published: Mar 26, 2005 |