AM83135-030 Description
The AM83135-030 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 100µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF , refractory/gold metallization, and...