AM83135-050 - RF & MICROWAVE TRANSISTORS

Datasheet Summary

Description

The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

STMicroelectronics

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Datasheet Details

Part number	AM83135-050
Manufacturer	STMicroelectronics
File Size	93.55 KB
Description	RF & MICROWAVE TRANSISTORS
Datasheet	AM83135-050 Datasheet
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AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS . . . . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 5.2 dB GAIN .310 x .310 2LF L (S064) hermetically sealed O RDER CODE AM83135-050 BRANDING 83135-50 DESCRIPTION The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive.

Published: Mar 26, 2005 |