Datasheet Details
| Part number | AM83135-050 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 93.55 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
 AM83135-050 Datasheet
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| Part number | AM83135-050 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 93.55 KB |
| Description | RF & MICROWAVE TRANSISTORS |
| Datasheet |
AM83135-050 Datasheet
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The AM83135-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.
This device is characterized at 10 µsec pulsewidth and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR with a +1 dB input overdrive.
Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
AM83135-050 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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