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B10NK60Z - N-CHANNEL Power MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/16 STP10NK60Z/F.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP10NK60Z/FP, STB10NK60Z/-1 STH10NK60ZFI, STW10NK60Z N-CHANNEL600V-0.65 Ω-10ATO-220/FP/D 2PAK/I2PAK/TO-247/ISOWATT218 Zener-Protected SuperMESH™ Power MOSFET R DS(on) < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 < 0.75 Ω Ω Ω Ω Ω Ω ID 10 10 10 10 10 10 A A A A A A Pw 115 W 115 W 35 W 115 W 35 W 156 W TYPE STB10NK60Z STB10NK60Z-1 STH10NK60ZFI STP10NK60Z STP10NK60ZFP STW10NK60Z s s s s s s VDSS 600 600 600 600 600 600 V V V V V V 3 2 1 1 2 3 TO-220 ISOWATT218 TO-220FP TYPICAL RDS(on) = 0.