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B11NM60 Datasheet N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 Ω typ.

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

They are therefore suitable for the most demanding high-efficiency converters.

Key Features

  • Order codes VDSS (@ TJmax) RDS(on) max. STB11NM60T4 STP11NM60 650 V 0.45 Ω.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 11 A Package D²PAK TO-220.