B20NK50Z Description
c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout. In te addition to a significant reduction in on- resistance, this device is designed to ensure a le high level of dv/dt capability for the most Obso demanding applications. Internal schematic diagram D(2)...
B20NK50Z Key Features
- Extremely high dv/dt capability du
- 100% avalanche tested ro
- Gate charge minimized P
- Very low intrinsic capacitances te
- Very good manufacturing repeatability sole Application Ob
- Switching
B20NK50Z Applications
- Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimi