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B20NK50Z - N-Channel MOSFET

General Description

c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout.

Key Features

  • Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s).
  • Extremely high dv/dt capability du.
  • 100% avalanche tested ro.
  • Gate charge minimized P.
  • Very low intrinsic capacitances te.
  • Very good manufacturing repeatability sole.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH™ Power MOSFET Zener-protected in D²PAK package Datasheet — obsolete product Features Type VDSS RDS(on) max ID PW STB20NK50Z 500 V < 0.27 Ω 17 A 190 W ct(s) ■ Extremely high dv/dt capability du ■ 100% avalanche tested ro ■ Gate charge minimized P ■ Very low intrinsic capacitances te ■ Very good manufacturing repeatability sole Application Ob ■ Switching applications t(s) - Description c This device is an N-channel Zener-protected u Power MOSFET developed using d STMicroelectronics’ SuperMESH™ technology, ro achieved through optimization of ST’s well P established strip-based PowerMESH™ layout.