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B20NM50FD - N-CHANNEL POWER MOSFET

General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.

It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

Figure 1.

Key Features

  • Type VDSS RDS(on) max RDS(on).
  • Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω.
  • nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω.
  • nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω.
  • nC 20 A 20 A 20 A.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Tight process control and high manufacturing yields.

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STB20NM50FD STF20NM50FD - STP20NM50FD N-channel 500 V, 0.22 Ω, 20 A D2PAK, TO-220FP, TO-220 FDmesh™ Power MOSFET (with fast diode) Features Type VDSS RDS(on) max RDS(on)* Qg ID STB20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STF20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC STP20NM50FD 500 V < 0.25 Ω 8.36 Ω* nC 20 A 20 A 20 A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Tight process control and high manufacturing yields Application ■ Switching applications Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.