STMicroelectronics B60NH02L
N-Channel Power MOSFET
| Part No. | B60NH02L |
|---|---|
| Datasheet | B60NH02L Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
PACKAGE TO-263 PACKAGING TAPE & REEL Symbol Parameter Value Unit Vspike(1) Drain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuous) at TC = 25°C 60 A ID Drain Current (continuous) at TC = 100°C 43 A IDM(2) Drain Current (pulsed) 240 A Ptot Total Dissipation at TC = 25°C 70 W Derating Factor 0.47 W/°C EAS (3) Single Pulse Avalanche Energy 280 mJ Tstg Storage Temperature Tj Max. Operating Junction Temperature -55 to 175 °C May 2004 1/11 STB60NH02L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.14 62.5 300 °C/W °C/W °CELECTRICAL CHARACTERISTICS
(TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 25 mA, VGS = 0 24 V IDSS Zero Gate Voltage VDS = 20 V 1...
