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B60NH02L - STB60NH02L

General Description

oThe STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STripFET™ technology.

application where high efficiency is to be achieved.

SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC

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STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE VDSS RDS(on) ID STB60NH02L 24 V < 0.0105 Ω 60 A ■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V ■ TYPICAL RDS(on) = 0.012 Ω @ 5 V )■ RDS(ON) * Qg INDUSTRY’s BENCHMARK t(s■ CONDUCTION LOSSES REDUCED c■ SWITCHING LOSSES REDUCED u■ LOW THRESHOLD DEVICE rod■ SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR PIN TAPE & REEL (SUFFIX “T4”) leteDESCRIPTION oThe STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STripFET™ technology. This is bsuitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.