B60NH02L Datasheet | STMicroelectronics

STB60NH02L N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STrip FET™ III POWER MOSFET TYPE VDSS RDS(on) STB60NH02L 24 V < 0.0105 Ω 60 A - TYPICAL RDS(on) = 0.0085 Ω @ 10 V - TYPICAL RDS(on) = 0.012 Ω @ 5 V )- RDS(ON) - Qg INDUSTRY’s BENCHMARK t(s- CONDUCTION LOSSES REDUCED c- SWITCHING LOSSES REDUCED u- LOW THRESHOLD DEVICE rod- SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR PIN TAPE & REEL (SUFFIX “T4”) lete DESCRIPTION o The STB60NH02L utilizes the latest advanced design srules of ST’s proprietary STrip FET™ technology. This is bsuitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. ) - OAPPLICATIONS t(s- SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES 3 1 D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM te Produc Ordering Information le SALES TYPE o STB60NH02LT4 MARKING B60NH02L Obs ABSOLUTE MAXIMUM RATINGS PACKAGE TO-263 PACKAGING TAPE & REEL Symbol Parameter Value Unit Vspike(1) Drain-source Voltage Rating 30 V VDS Drain-source Voltage (VGS = 0) 24 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 24 V VGS Gate- source Voltage ±...