B6NC60 - STB6NC60

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

STMicroelectronics

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Part number	B6NC60
Manufacturer	STMicroelectronics
File Size	276.31 KB
Description	STB6NC60
Datasheet	B6NC60 Datasheet
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B6NK60Z - N-CHANNEL MOSFET

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N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH™II MOSFET TYPE STP(B)6NC60(-1) STP6NC60FP s s s s s STP6NC60 - STP6NC60FP STB6NC60-1 VDSS 600 V 600 V RDS(on) < 1.2 Ω < 1.2 Ω ID 6A 6A 3 1 2 TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

Published: Dec 17, 2009 |