DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. <40KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s s MOTOR CONTROLS SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES ORDERING INFORMATION SALES TYPE STGP7NB60FD STGB7NB60FDT4 MARKING GP7NB60FD GB7NB60FD PACKAGE TO-220 D2PAK PACKAGING TUBE TAPE & REEL June 2003 1/11 STGP7NB60FD - STGB7NB60FD ABSOLUTE MAXIMUM RATINGS
Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 ±20 14 7 56 80 0.64 – 55 to 150 150 Unit V V A A A W W/°C °C °C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rt...
STMicroelectronics
