STMicroelectronics B80NF55-06T
This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.| Part No. | B80NF55-06T |
|---|---|
| Datasheet | B80NF55-06T Download |
| Manufacturer |  STMicroelectronics |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
FEATURES
Type STB80NF55-06T VDSS 55 V RDS(on) max. 6.5 mΩ ID 80 A● AEC-Q101 qualified
● Exceptional dv/dt capability
● 100% avalanche tested
● Low gate charge
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STB80NF55-06T Product summary Order code STB80NF55-06T Marking B80NF55-06T Package D²PAK Packing Tape and reel DS8852 - Rev 2 - September 2018 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C P1 Long term load test (ID= 100 A, VDS= 1.5 V, tpulse=10 ms) ΔVSD (tested) P2 (3) Short term load test (ID= 75 A, VDS= 15 V, tpulse=700 μs) ΔVSD (not tested) EAS(4) Single-pulse avalanche energy dv/dt(5) Peak diode recovery voltage slope Tstg Storage temperature range Tj Operating junction temperature range 1.
