B80NF55L-08 Datasheet PDF | STMicroelectronics

STMicroelectronics B80NF55L-08

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting tran- sistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Part No.	B80NF55L-08
Datasheet	B80NF55L-08 Download
Manufacturer	STMicroelectronics
Description	N-CHANNEL Power MOSFET
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DESCRIPTION

INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com

APPLICATIONS

s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID (1) Drain Current (continuos) at TC = 25°C ID (1) Drain Current (continuos) at TC = 100°C IDM ( ) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt (2) Peak Diode Recovery voltage slope EAS(3) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (q) Pulse width limited by safe operating area April 2003 DataSheet4U.com Value 55 55 ± 16 80 80 320 300 2 15 870 –55 to 175 175 (1) Current Limited by Package (2) ISD ≤80A, di/dt ≤500A/µs, VDD =40V Tj ≤ TJMAX. (3) Starting Tj=25°C, ID=40A, VDD=40V Unit V V V A A A W W/°C V/ns mJ °C °C 1/8 DataShee et4U.com STP80NF55L-08 THERMAL DATA Rthj-case Thermal Resistance...