STMicroelectronics B9NK90
N-channel MOSFET
FEATURES
Type STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z VDSS 900V RDS(on) max. ID <1.3Ω 8A Pw 160 W 160 W 160 W 40 W● Extremely high dv/dt capability
● 100% avalanche tested
● Gate charge minimized Application
● Switching applications
DESCRIPTION
The SuperMESH™ series is obtained through an optimization of STMicroelectronics’ wellestablished strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly lower, it also ensures very good dv/dt capability for the most demanding applications. This series complement STs’ full range of high voltage power MOSFETs. Table 1. Device summary Order codes STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z Marking B9NK90 F9NK90Z P9NK90Z W9NK90Z 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-247 3 2 TO-220FP1 Figure 1. Internal schematic diagram D(2) G(1) Package D²PAK TO-2