STMicroelectronics BALF-ATM-01E3
The BALF-ATM-01E3 from STMicroelectronics is an integrated balun, which also integrates a matching network in a monolithic glass substrate. The device uses STMicroelectronics’ IPD technology on a nonconductive glass substrate to optimize RF performance.| Part No. | BALF-ATM-01E3 |
|---|---|
| Datasheet | BALF-ATM-01E3 Download |
| Manufacturer |  STMicroelectronics |
| Description | balun transformer |
| Buy | Stock & Price |
DESCRIPTION
Matching impedance has been customized for the ATMEL chip. Figure 1: Pin configuration (pad view)FEATURES
● 2.4 – 2.5 GHz balun with integrated matching network● Matching optimized for following chipsets: ATSAMR21E18
● Low insertion loss
● Low amplitude imbalance
● Low phase imbalance
● Coated CSP on glass bumpless
● Small footprint 2.5 mm² Benefits
● Very low profile
● High RF performance
● PCB space saving versus discrete solution
● BOM count reduction
● Efficient manufacturability BAL+ GND GND BAL- GND SE PAD VIEW June 2017 DocID030654 Rev 1 This is information on a product in full production. 1/12 Characteristics BALF-ATM-01E3 1 Characteristics Symbol PIN VESD TOP Table 1: Absolute maximum ratings (limiting values) Parameter Value Min. Typ. Input power RFIN ESD ratings MIL STD883C (HBM: C = 100 pF, R = 1.5 Ω, air discharge) - 2000 - ESD ratings machine model (MM: C = 200 pF, R = 25 W, L = 500 nH) 500 - Operating temperature -40 - Max. 4 +105 Unit dBm V °C Symbol ZOUT ZIN f IL RL RL ɸimb Aimb H2 H3 Table 2: Electrical characteristics (Tamb = 25 °C) Parameter Min.
