STMicroelectronics BAR28
The lead diameter ∅ D is not controlled over zone E ) - O lete B 12.7 0.500 2 - The minimum axial lengh within which the device may be t(s o ∅ C 1.530 2.000 0.060 0.079 placed with its leads bent at right angles is 0.59"(15 mm) c bs ∅ D 0.458 0.558 0.018 0.022 du - O E 1.27 0.050 Obsolleettee PPrrooduct(s) Information furnished is believed to be accurate and reliable. This publication supersedes and replaces all information previously supplied.| Part No. | BAR28 |
|---|---|
| Datasheet | BAR28 Download |
| Manufacturer |  STMicroelectronics |
| Description | SMALL SIGNAL SCHOTTKY DIODE |
| Buy | Stock & Price |
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic t(s) range. Matched batches are available on request. duc ABSOLUTE RATINGS (limiting values) Pro t(s) Symbol te c VRRM le du IF so ro IFSM b P Tstg - O te Tj t(s) ole TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Ta = 25°C Surge non Repetitive Forward Current* tp ≤ 1s Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case c bs THERMAL RESISTANCE du - O Symbol Test Conditions ro ) Rth(j-a) Junction-ambient* te P ct(sELECTRICAL CHARACTERISTICS
le du STATIC CHARACTERISTICS bso Pro Symbol O te VBR le VF * * Obso IR * * Test Conditions Tamb = 25°CIR = 10µA Tamb = 25°CIF = 1mA Tamb = 25°CIF = 15mA Tamb = 25°CVR = 50V DO 35 (Glass) Value Unit 70 V 15 mA 50 mA - 65 to 200 °C - 65 to 200 230 °C Value 400 Unit °C/W Min.
