STMicroelectronics BAS69
The BAS69 series use 15V barrier, with extremely P t(s low junction capacitance, suitable for the detection of an RF signal and the compensation lete uc of the voltage drift with the temperature. The d presented packages make the device ideal in so ro applications where space saving is critical.| Part No. | BAS69 |
|---|---|
| Datasheet | BAS69 Download |
| Manufacturer |  STMicroelectronics |
| Description | Low capacitance small signal Schottky diodes |
| Buy | Stock & Price |
FEATURES
● Low diode capacitance BAS69KFILM (Single)● Designed for RF applications
● Low profile packages t(s)
● Very low parasitic inductor and resistor uc
DESCRIPTION
rod ) b P The low junction capacitance will reduce the - O te disturbance on the RF signal. SOD-523 SOT-323 BAS69WFILM (Single) BAS69-05WFILM (Common cathode) BAS69-06WFILM (Common anode) BAS69-04WFILM (Series) ct(s) bsole BAS69-07P6FILM u O (2 parallel diodes) Prod t(s) - SOT-666 BAS69-09P6FILM (2 opposite diodes) lete duc Configurations in top view bso Pro Table 1. Device summary O te Symbol ole IF bs VRRM O C (typ) Value 10 mA 15 V < 1 pF Tj (max) 150 °C October 2009 Doc ID 12565 Rev 2 1/9 9 Characteristics 1 Characteristics BAS69 Table 2. Symbol Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Parameter Value Unit VRRM IF IFSM Repetitive peak reverse voltage Continuous forward current Surge non repetitive forward current Half wave, single phase 60 Hz 15 V 10 mA 2 A Tstg Storage temperature range ) Tj Maximum operating junction temperature (1) t(s TL Maximum soldering temperature(1) c 1.
