STMicroelectronics BAT49
This device has integrated protection against excessive voltage such as electrostatic discharges.DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Repetitive Peak Forward Current* Surge non Repetitive Forward Current* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Ta = 70 °C tp = 1s δ ≤ 0.5 tp ≤ 10ms DO 41 (Glass) Value 80 500 3 10 - 65 to 150 - 65 to 125 230 Unit V mA A A °C °C °C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 110 Unit °C/WELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS Symbol IR * * VF * * Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Test Conditions VR = 80V IF = 10mA IF = 100mA IF = 1A Min. Typ. Max. 200 0.32 0.42 1 Unit µA V DYNAMIC CHARACTERISTICS Symbol C Tj = 25°C Test Conditions f = 1MHz VR = 0V VR = 5V * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Min.