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BC393 Datasheet High Voltage Amplifier

Manufacturer: STMicroelectronics

Overview: BC393.

General Description

The BC393 is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications.

The complementary NPN type is the BC394.

HIGH VOLTAGE AMPLIFIER TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC Pto t T stg Tj Parameter Collector-base Voltage (IE = 0) Collector-emitter Voltage (IB = 0) Emitter-base Voltage (IC = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 25 °C Storage Temperature Junction Temperature January 1989 V al ue – 180 – 180 –6 – 100 0.4 1.4 – 55 to 200 200 Unit V V V mA W W °C °C 1/5 BC393 THERMAL DATA Rth j-cas e Thermal Resistance Junction-case R th j-amb Thermal Resistance Junction-ambient Max Max 125 440 °C/W °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions ICB O Collector Cutoff Current (IE = 0) V(BR) CBO V(BR) CEO* V(BR) EBO V CE (s at ) * Collector-base Breakdown Voltage (IE = 0 ) Collector-emitter Breakdown Voltage (IB = 0 ) Emiter-base Breakdown Voltage (IC = 0 ) Collector-emitter Saturation Voltage VBE ( sat) * Base-emitter Saturation Voltage h F E * DC Curent Gain fT C CBO Transition frequency Collector-base Capacitance VCB = – 100 V VCB = – 100 V T amb = 150 °C IC = – 10 µA IC = – 2 mA IE = – 10 µA IC = – 10 mA IB = – 1 mA IC = – 50 mA IB = – 5 mA IC = – 10 mA IC = – 50 mA IC = – 1 mA IC = – 10 mA I C = – 10 mA IB = – 1 mA IB = – 5 mA VCE = – 10 V VCE = – 10 V VCE = – 10 V IE = 0 f = 1 MHz VCB = – 10 V * Pulsed : pulse duration = 300 µs, duty cycle = 1 %.

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