STMicroelectronics BC847B
SMALL SIGNAL NPN TRANSISTORS
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CBO V CEO V EBO IC I CM I BM I EM P t ot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Peak Current Emitter Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value 50 50 45 6 0.1 0.2 0.2 0.2 300 -65 to 150 150 Uni t V V V V A A A A mW o o C C October 1997 1/4 BC847 THERMAL DATA R t hj-amb● R th j-SR
● Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 420 330 o o C/W C/W
● Mounted on a ceramic substrate area = 10 x 8 x 0.6 mm
ELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CE = 30 V V CE = 30 V I C = 10 µ A T amb = 150 o C 50 Min. Typ . Max. 15 5 Un it nA µA V V (BR)CES ∗ Collector-Emitter Breakdown Voltage (V...